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In page MESFET:
"MESFETs are usually constructed in compound semiconductor technologies lacking high quality surface passivation such as gallium arsenide, indium phosphide, or Silicon carbide, and are faster but more expensive than silicon-based JFETs or MOSFETs. Production MESFETs are operated up to approximately 45 GHz,[1] and are commonly used for microwave frequency communications and radar. The first MESFETs were developed in 1966, and a year later their extremely high frequency RF microwave performance was demonstrated.[2]
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